Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition-Reference-Cited by-同舟云学术

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

Published:2020-05 Issue:3 Volume:38 Page:032601
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Lin Kang-Yi¹^ORCID,Li Chen²^ORCID,Engelmann Sebastian³,Bruce Robert L.³,Joseph Eric A.³,Metzler Dominik⁴,Oehrlein Gottlieb S.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20740

2. Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20740

3. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598

4. IBM Semiconductor Technology Research, 257 Fuller Road, Albany, New York 12203

Funder

Semiconductor Research Corporation

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5143247

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