Comparison of ohmic metallization schemes for InGaAlN-Reference-Cited by-同舟云学术

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Comparison of ohmic metallization schemes for InGaAlN

Published:1997-05 Issue:3 Volume:15 Page:802-806
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Ren F.,Vartuli C. B.,Pearton S. J.,Abernathy C. R.,Donovan S. M.,MacKenzie J. D.,Shul R. J.,Zolper J. C.,Lovejoy M. L.,Baca A. G.,Hagerott-Crawford M.,Jones K. A.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.580711

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current transport through ohmic contacts to indiume nitride with high defect density;Functional materials;2018-09-27

2. http://journal-spqeo.org.ua;Semiconductor Physics Quantum Electronics and Optoelectronics;2018-03-29

3. Temperature dependences of the contact resistivity in ohmic contacts to n +-InN;Semiconductors;2015-04

4. Flow of the current along metallic shunts in ohmic contacts to wide-gap III–V semiconductors;Semiconductors;2009-09

5. Mechanisms of current flow in metal-semiconductor ohmic contacts;Semiconductors;2007-11

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