Temperature dependences of the contact resistivity in ohmic contacts to n +-InN

Author:

Sachenko A. V.,Belyaev A. E.,Boltovets N. S.,Brunkov P. N.,Jmerik V. N.,Ivanov S. V.,Kapitanchuk L. M.,Konakova R. V.,Klad’ko V. P.,Romanets P. N.,Saja P. O.,Safryuk N. V.,Sheremet V. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference39 articles.

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2. Indium Nitride and Related Alloys, Ed. by T. D. Veal, C. F. McConville, and W. J. Achaff (CRS Press, Boca Raton, 2010).

3. A. N. Kovalev, Transistors Based on Semiconductor Heterostructures (Izd. Dom MISiS, Moscow, 2011) [in Russian].

4. S. V. Ivanov, D. V. Nechaev, A. A. Sitnikova, V. V. Ratnikov, M. A. Yagovkina, N. V. Rzheutskii, E. V. Lutsenko, V. N. Jmerik, Semic. Sci. Technol. 29(8), 084008 (2014).

5. T. V. Blank and Yu. A. Goldberg, Semiconductors 41, 1263 (2007).

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Precise assembly and joining of silver nanowires in three dimensions for highly conductive composite structures;International Journal of Extreme Manufacturing;2019-05-07

2. Features of the Formation of Ohmic Contacts to n+-InN;Ukrainian Journal of Physics;2019-01-30

3. Current transport through ohmic contacts to indiume nitride with high defect density;Functional materials;2018-09-27

4. http://journal-spqeo.org.ua;Semiconductor Physics Quantum Electronics and Optoelectronics;2018-03-29

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