High-temperature Ta diffusion in the grain boundary of thin Cu films-Reference-Cited by-同舟云学术

High-temperature Ta diffusion in the grain boundary of thin Cu films

Published:2016-07 Issue:4 Volume:34 Page:040606
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Mardani Shabnam¹,Norström Hans¹,Smith Ulf¹,Zhang Shi-Li¹

Affiliation:

1. Solid State Electronics, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-75121 Uppsala, Sweden

Funder

Stiftelsen för Strategisk Forskning (SSF)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4950744

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