Multi-staged deposition of trench-gate oxides for power MOSFETs
Author:
Affiliation:
1. Infineon Technologies Dresden GmbH, Koenigsbruecker Str. 180, 01099 Dresden, Germany
2. NaMLab gGmbH, Noethnitzer Str. 64, 01187 Dresden, Germany
3. Institute for Semiconductors and Microsystems, Noethnitzer Str. 64, 01187 Dresden, Germany
Publisher
American Vacuum Society
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://avs.scitation.org/doi/pdf/10.1116/1.5080527
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