Gas-efficient deposition of device-quality hydrogenated amorphous silicon using low gas flows and power modulated radio-frequency discharges-Reference-Cited by-同舟云学术

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Gas-efficient deposition of device-quality hydrogenated amorphous silicon using low gas flows and power modulated radio-frequency discharges

Published:2003-01 Issue:1 Volume:21 Page:156-166
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Biebericher A. C. W.,van der Weg W. F.,Rath J. K.,Akdim M. R.,Goedheer W. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1527899

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Morphology and micro-structural studies of distinct silicon thin films deposited using very high frequency plasma enhanced chemical vapor deposition process;Thin Solid Films;2016-11

2. Growth of Mixed-Phase Amorphous and Ultra Nanocrystalline Silicon Thin Films in the Low Pressure Regime by a VHF PECVD Process;Silicon;2012-03-03

3. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD);Science in China Series E: Technological Sciences;2008-03-26

4. Effect of oligomers on the growth of amorphous silicon films in a PECVD reactor;Technical Physics;2006-06

5. Study of the structural and optical properties of microcrystalline silicon film;Acta Physica Sinica;2006

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