SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes-Reference-Cited by-同舟云学术

SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes

Published:2016-07 Issue:4 Volume:34 Page:042204
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Lim Wantae¹,Kum Hyun¹,Choi Young-Jin¹,Sim Sung-Hyun¹,Yeon Ji-Hye¹,Kim Jung-Sub¹,Seong Han-Kyu¹,Cha Nam-Goo¹,Kim Yong-Il¹,Park Young-Soo¹,Yoo Geonwook²,Pearton Stephen J.³

Affiliation:

1. Advanced LED Technology Development Team, Samsung Electronics, Yongin 446-711, South Korea

2. Display Convergence Research Center, Korea Electronics Technology Institute, Sungnam 463-816, South Korea

3. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

Funder

Directorate for Engineering (ENG)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.4959027

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