Growth of ternary alloy Si1−x−yGexCy by rapid thermal chemical vapor deposition-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Growth of ternary alloy Si1−x−yGexCy by rapid thermal chemical vapor deposition

Published:1995-09 Issue:5 Volume:13 Page:2336-2340
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Bodnar S.,Regolini J. L.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579518

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Raman and Fourier transform infrared study of substitutional carbon incorporation in rapid thermal chemical vapor deposited Si1−x−yGexCy on (1 0 0) Si;Journal of Applied Physics;2010-01-15

2. Growth and Characterization of Boron-Doped Si_1-x-yGe_xC_y Layers Grown by Reduced Pressure Chemical Vapor Deposition;Defect and Diffusion Forum;2005-10

3. Growth of Si_1-x-yGe_xC_y Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene;Solid State Phenomena;2003-09

4. Systematic theoretical investigations of miscibility in Si1−x−yGexCy thin films;Applied Surface Science;2003-06

5. Reduced pressure chemical vapour deposition of Si/Si1 x yGexCyheterostructures using a chlorinated chemistry;Semiconductor Science and Technology;2003-03-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP