Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition
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Published:2005-10
Issue:
Volume:245-246
Page:39-50
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ISSN:1662-9507
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Container-title:Defect and Diffusion Forum
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language:
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Short-container-title:DDF
Author:
Radamson H.H.1, Hållstedt J.1
Affiliation:
1. KTH, Royal Institute of Technology
Abstract
In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by reduced pressure chemical vapor deposition (RPCVD) are presented. Furthermore, diffusion of carbon and boron in silicon-based material is also discussed.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation
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