Etching technique for ruthenium with a high etch rate and high selectivity using ozone gas-Reference-Cited by-同舟云学术

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Etching technique for ruthenium with a high etch rate and high selectivity using ozone gas

Published:2001 Issue:6 Volume:19 Page:2133
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Nakahara M.,Tsunekawa S.,Watanabe K.,Arai T.,Yunogami T.,Kuroki K.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Temperature Atomic Layer Deposition of Rutile TiO₂ Films on RuO₂ Substrates: Interfacial Reactions and Dielectric Performance;Chemistry of Materials;2024-03-28

2. Chemical mechanism of oxidative etching of ruthenium: Insights into continuous versus self-limiting conditions;Applied Surface Science;2023-11

3. Studying the efficacy of hydrogen plasma treatment for enabling the etching of thermally annealed ruthenium in chemical solutions;Micro and Nano Engineering;2023-06

4. Materials challenges for SrRuO₃: From conventional to quantum electronics;APL Materials;2022-09-01

5. Atomic Layer Deposition of Ruthenium Films Using Ruthenium Diketonates and O₂, H₂, or N₂O: The Role of Ruthenium Etching;The Journal of Physical Chemistry C;2022-07-22

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