Influence of C4F8/Ar-based etching and H2-based remote plasma ashing processes on ultralow k materials modifications-Reference-Cited by-同舟云学术

Influence of C4F8/Ar-based etching and H2-based remote plasma ashing processes on ultralow k materials modifications

Published:2010-03 Issue:2 Volume:28 Page:284-294
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Kuo Ming-Shu,Hua Xuefeng,Oehrlein G. S.,Ali A.,Jiang P.,Lazzeri P.,Anderle M.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3308623

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