Impact of hydrofluorocarbon molecular structure parameters on plasma etching of ultra-low-K dielectric-Reference-Cited by-同舟云学术

Impact of hydrofluorocarbon molecular structure parameters on plasma etching of ultra-low-K dielectric

Published:2016-05 Issue:3 Volume:34 Page:031306
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Li Chen¹,Gupta Rahul²,Pallem Venkateswara²,Oehrlein Gottlieb S.³

Affiliation:

1. Department of Physics and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742

2. American Air Liquide, Newark, Delaware 19702

3. Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742

Funder

Air Liquide

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4944609

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of high aspect ratio SiO2 etching using C4H2F6 isomers;Applied Surface Science;2023-12

2. Phenomenological model for predicting C _x H _y F _z ⁺ ion etching yields of SiO₂ and SiN _x substrates;Japanese Journal of Applied Physics;2023-05-02

3. Plasma Atomic Layer Etching of SiO₂ and Si₃N₄ with Low Global Warming C₄H₃F₇O Isomers;ACS Sustainable Chemistry & Engineering;2023-04-13

4. Organofluorine Chemical Gases of Industrial Importance in Semiconductor Materials Processing;PATAI'S Chemistry of Functional Groups;2022-12-02

5. Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent;Journal of Vacuum Science & Technology A;2022-12