Characterization of metal–oxide–semiconductor capacitors with improved gate oxides prepared by repeated rapid thermal annealings in N2O
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Published:1994-07
Issue:4
Volume:12
Page:2400
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
6 articles.
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