Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations
Author:
Publisher
IBM
Subject
General Computer Science
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of repetition of plasma nitride oxide integration;Thin Solid Films;2006-12
2. Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration;Microelectronics Reliability;2005-01
3. Ultrathin gate dielectric films for si-based microelectronic devices;Handbook of Thin Films;2002
4. Ultrathin gate dielectric films for Si-based microelectronic devices;Non-Crystalline Films for Device Structures;2002
5. Gate leakage current simulation for nanoscale NMOSFETs with nitrided gate dielectric by Boltzmann transport equation;2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497)
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