Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration-Reference-Cited by-同舟云学术

Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration

Published:2005-01 Issue:1 Volume:45 Page:47-56
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Hook Terence B.,Bolam Ronald,Clark William,Burnham Jay,Rovedo Nivo,Schutz Laura

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Impact of negative bias temperature instability on digital circuit reliability;Ready;IRPS,2002

2. Hot electron-induced MOSFET degradation––model, monitor, and improvement;Hu;IEEE Trans. Electron. Dev,1985

3. The combined effect of deuterium anneals and deuterated barrier- nitride processing on hot-electron degradation in MOSFETs;Ference;IEEE Trans. Electron. Dev,1999

4. Sasada K, et al. The influence of SiN films on negative bias temperature instability and characteristics in MOSFETs. In: Proceedings of the Conference on Microelectronic Test Structures, vol. 11, Kanazawa, Japan, 1998. p. 207–10

5. The effects of fluorine on parametrics and reliability in a 0.18-μm 3.5/6.8 nm dual gate oxide CMOS technology;Hook;IEEE Trans. Electron. Dev,2001

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3. Mature processability and manufacturability by characterizing VT and Vmin behaviors induced by NBTI and AHTOL test;2010 IEEE International Reliability Physics Symposium;2010

4. Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface;Japanese Journal of Applied Physics;2008-03-14

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