A JEOL 100 CXII converted for use as an electron-beam lithography system-Reference-Cited by-同舟云学术

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A JEOL 100 CXII converted for use as an electron-beam lithography system

Published:1989-11 Issue:6 Volume:7 Page:1823
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Thoms S.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of a 100 kV thermal field emission electron-beam nanolithography system;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

2. Reliable fabrication of sub-40 nm period gratings using a nanolithography system with interferometric dynamic focus control;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11

3. Fabrication of 3 nm wires using 100 keV electron beam lithography and poly(methyl methacrylate) resist;Applied Physics Letters;1996-01-15

4. 3 nm NiCr wires made using electron beam lithography and PMMA resist;Microelectronic Engineering;1996-01

5. High resolution studies on Hoechst AZ PN114 chemically amplified resist;Microelectronic Engineering;1996-01

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