Polycrystalline silicon thin films with hydrofluoric acid permeability for underlying oxide etching and vacuum encapsulation-Reference-Cited by-同舟云学术

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Polycrystalline silicon thin films with hydrofluoric acid permeability for underlying oxide etching and vacuum encapsulation

Published:2000-07 Issue:4 Volume:18 Page:1853-1858
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kageyama Y.,Tsuchiya T.,Funabashi H.,Sakata J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.582435

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Encapsulation by film deposition;Handbook of Silicon Based MEMS Materials and Technologies;2020

2. Encapsulation by Film Deposition;Handbook of Silicon Based MEMS Materials and Technologies;2015

3. Encapsulation by Film Deposition;Handbook of Silicon Based MEMS Materials and Technologies;2010

4. A microfabrication process for a vacuum-encapsulated microchamber;Microelectronic Engineering;2005-04

5. “Plug-up”–a new concept for fabricating SOI MEMS devices;Microsystem Technologies;2004-08

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