Passivation of donors in electron beam lithographically defined nanostructures after methane/hydrogen reactive ion etching-Reference-Cited by-同舟云学术

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Passivation of donors in electron beam lithographically defined nanostructures after methane/hydrogen reactive ion etching

Published:1988-11 Issue:6 Volume:6 Page:1911
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Cheung R.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 75 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single-peak narrow-bandwidth mid-infrared thermal emitters based on quantum wells and photonic crystals;Applied Physics Letters;2013-05-13

2. Reactive ion etching induced damage evaluation for optoelectronic device fabrication;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

3. PLASMA DAMAGE IN METHANE–HYDROGEN REACTIVE ION ETCHED GaAs;Surface Review and Letters;2001-10

4. Damage in III/V semiconductors caused by hard- and soft-etching plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-05

5. Electrical Evaluation of Sidewall Damage Caused by CH4/H2Reactive Ion Etching;Japanese Journal of Applied Physics;1998-08-15

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