Line edge roughness characterization with a three-dimensional atomic force microscope: Transfer during gate patterning processes
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Origin of plasma-induced surface roughening and ripple formation during plasma etching: The crucial role of ion reflection;Journal of Applied Physics;2018-10-14
3. Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation;Journal of Physics D: Applied Physics;2017-09-15
4. Dependency analysis of line edge roughness in electron-beam lithography;Microelectronic Engineering;2015-02
5. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products;Journal of Applied Physics;2014-12-14
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