Characteristics of atomic-layer-deposited thin Hf[sub x]Zr[sub 1−x]O[sub 2] gate dielectrics-Reference-Cited by-同舟云学术

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Characteristics of atomic-layer-deposited thin Hf[sub x]Zr[sub 1−x]O[sub 2] gate dielectrics

Published:2007 Issue:3 Volume:25 Page:845
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Triyoso D. H.,Hegde R. I.,Schaeffer J. K.,Gregory R.,Wang X.-D.,Canonico M.,Roan D.,Hebert E. A.,Kim K.,Jiang J.,Rai R.,Kaushik V.,Samavedam S. B.,Rochat N.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

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