Silicon etching in NF3/O2 remote microwave plasmas-Reference-Cited by-同舟云学术

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Silicon etching in NF3/O2 remote microwave plasmas

Published:1999-09 Issue:5 Volume:17 Page:2431-2437
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Matsuo P. J.,Kastenmeier B. E. E.,Oehrlein G. S.,Langan J. G.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581979

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors;Nanomaterials;2024-05-24

2. Study of Tungsten-Doped Carbon Hard Mask Etch Process Using NF₃/O₂ Based Chemistry;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

3. Significance of plasma-surface interactions in the etch behavior of low-k materials;Journal of Vacuum Science & Technology A;2023-11-13

4. Stability and plasma etching behavior of yttrium-based coatings by air plasma spray process;Surface and Coatings Technology;2023-02

5. Isotropic dry etching of Si selectively to Si0.7Ge0.3 for CMOS sub-10 nm applications;Journal of Vacuum Science & Technology A;2020-05

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