Isotropic dry etching of Si selectively to Si0.7Ge0.3 for CMOS sub-10 nm applications-Reference-Cited by-同舟云学术

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Isotropic dry etching of Si selectively to Si0.7Ge0.3 for CMOS sub-10 nm applications

Published:2020-05 Issue:3 Volume:38 Page:033002
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Rachidi Sana¹,Campo Alain¹,Loup Virginie¹,Vizioz Christian¹,Hartmann Jean-Michel¹,Barnola Sébastien¹,Posseme Nicolas¹

Affiliation:

1. Université Grenoble Alpes and CEA, LETI, Grenoble 38000, France

Funder

Agence Nationale de la Recherche

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5143118

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology;Nanomaterials;2024-05-09

2. Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM;Journal of Semiconductors;2023-12-01

3. Surface Passivation of Crystalline Silicon Wafer Using H2S Gas;Applied Sciences;2021-04-15

4. Manipulating Etch Selectivities in XeF₂ Vapour Etching;Journal of Microelectromechanical Systems;2021-02

5. Wet Alkaline Etching of Si Selectively to SiGe for sub 10 nm Gate All Around Architectures;ECS Journal of Solid State Science and Technology;2021-01-01

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