Interface structure of Ge/Si(111) during solid‐phase epitaxy studied by medium‐energy ion scattering-Reference-Cited by-同舟云学术

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Interface structure of Ge/Si(111) during solid‐phase epitaxy studied by medium‐energy ion scattering

Published:1995-03 Issue:2 Volume:13 Page:289-294
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Sumitomo K.,Nishioka T.,Shimizu N.,Shinoda Y.,Ogino T.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579412

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ge(5×5) as a wetting layer on Si(111);Surface Science;2009-02

2. Aluminium-induced nanocrystalline Ge formation at low temperatures;Journal of Physics: Condensed Matter;2007-02-02

3. 10.3131/jvsj.49.277;Shinku;2006

4. Selective formation of Ge nanostructures on Si(1 1 1) surface with patterned steps;Applied Surface Science;2004-10

5. Anisotropic strain relaxation of Ge nanowires on Si(113) studied by medium-energy ion scattering;Physical Review B;2003-01-22

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