Influence of oxygen diffusion on residual stress for tantalum thin films

Author:

Cheng M. H.,Cheng T. C.,Huang W. J.,Chang M. N.,Chung M. K.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Influence of tantalum's crystal phase growth on the microstructural, electrical and mechanical properties of sputter-deposited tantalum thin film layer;International Journal of Refractory Metals and Hard Materials;2020-11

2. Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x ∼ 1;Nanoscale;2019

3. Evaluation of residual stress in sputtered tantalum thin-film;Applied Surface Science;2016-05

4. Thick sputtered tantalum coatings for high-temperature energy conversion applications;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-11

5. Control of stress in tantalum thin films for the fabrication of 3D MEMS structures;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-11

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