Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates-Reference-Cited by-同舟云学术

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Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

Published:2012-01 Issue:1 Volume:30 Page:01A127
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Delabie Annelies,Sioncke Sonja,Rip Jens,Van Elshocht Sven,Pourtois Geoffrey,Mueller Matthias,Beckhoff Burkhard,Pierloot Kristine

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3664090

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. H2O-based atomic layer deposition mechanism of aluminum oxide using trimethylaluminum;Surface Science;2024-12

2. Reducing the Thermal Effects during Coating of Superconducting Radio-Frequency Cavities: A Case Study for Atomic Layer Deposition of Alumina with a Combined Numerical and Experimental Approach;Chemistry of Materials;2024-03-05

3. Gamma-radiation hardness and long-term stability of ALD-Al2O3 surface passivated Si;Journal of Applied Physics;2023-04-17

4. Improving ALD-Al₂O₃ Surface Passivation of Si Utilizing Pre-Existing SiO_x;IEEE Journal of Photovoltaics;2022-07

5. Tuning Molecular Inhibitors and Aluminum Precursors for the Area-Selective Atomic Layer Deposition of Al₂O₃;Chemistry of Materials;2022-05-10

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