Particle formation rates in sulfur hexafluoride plasma etching of silicon
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.580143
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix ( $${{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}$$ = 15.5 mol %);Semiconductors;2018-09-06
2. Metal-free reduction of the greenhouse gas sulfur hexafluoride, formation of SF5 containing ion pairs and the application in fluorinations;Green Chemistry;2017
3. On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2) with time-modulated dc magnetron plasma;Semiconductors;2016-04
4. Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2);Semiconductors;2015-07
5. Growth of embryonic dust particles in a complex plasma;Journal of Applied Physics;2010-05-15
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