On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2) with time-modulated dc magnetron plasma-Reference-Cited by-同舟云学术

On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2) with time-modulated dc magnetron plasma

Published:2016-04 Issue:4 Volume:50 Page:530-540
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Undalov Yu. K.,Terukov E. I.,Gusev O. B.,Trapeznikova I. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782616040230.pdf

Reference48 articles.

1. A. I. Gusev, Nanomaterials, Nanostructures, Nanotechnologies (Fizmatgiz, Moscow, 2007) [in Russian].

2. I. P. Suzdalev, Nanotechnology: Physical Chemistry of Nanoclusters, Nanostructures and Nanomaterials (Librokom, Moscow, 2009) [in Russian].

3. I. P. Suzdalev, Khim. Fiz. 22, 69 (2003).

4. O. B. Gusev, A. N. Poddubnyi, A. A. Prokof’ev, and I. N. Yassievich, Semiconductors 47, 183 (2013).

5. D. Guzman, U. Corona, and M. Cruz, J. Luminesc. 102–103, 487 (2003).

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1. Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase ($${{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}$$ = 21.5 mol %);Semiconductors;2019-11

2. Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix ( $${{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}$$ = 15.5 mol %);Semiconductors;2018-09-06

3. Effect of annealing in oxidizing atmosphere on optical and structural properties of silicon suboxide thin films obtained by gas-jet electron beam plasma chemical vapor deposition method;Vacuum;2018-06