Growth and characterization of modulation-doped double barrier quantum well infrared photodetectors-Reference-Cited by-同舟云学术

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Growth and characterization of modulation-doped double barrier quantum well infrared photodetectors

Published:2003 Issue:2 Volume:21 Page:883
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Luna E.,Guzmán A.,Sánchez-Rojas J. L.,Tijero J. M. G.,Hey R.,Hernando J.,Muñoz E.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells;Brazilian Journal of Physics;2009-04

2. Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes;Semiconductor Science and Technology;2006-06-28

3. Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect;Journal of Applied Physics;2005-08-15

4. Effect of non-abrupt doping profiles on the carrier sheet density in one-side modulation-doped GaAs/AlGaAs quantum wells;physica status solidi (c);2004-08

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