Oxygen incorporation in AlN films grown by plasma-enhanced atomic layer deposition
Author:
Affiliation:
1. Physics Department, Marmara University, Goztepe, Istanbul 34722, Turkey
Funder
Turkiye Bilimsel ve Teknoloji Arastirma Kurumu
Marmara Üniversitesi
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://avs.scitation.org/doi/pdf/10.1116/6.0001498
Reference35 articles.
1. Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD
2. Structure of Ultrathin Native Oxides on III–Nitride Surfaces
3. Wide band gap semiconductor technology: State-of-the-art
4. Demonstration of flexible thin film transistors with GaN channels
5. Status and prospects of plasma-assisted atomic layer deposition
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