Etching of polysilicon in inductively coupled Cl[sub 2] and HBr discharges. III. Photoresist mask faceting, sidewall deposition, and microtrenching-Reference-Cited by-同舟云学术

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Etching of polysilicon in inductively coupled Cl[sub 2] and HBr discharges. III. Photoresist mask faceting, sidewall deposition, and microtrenching

Published:2002 Issue:3 Volume:20 Page:1077
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Mahorowala Arpan P.,Sawin Herbert H.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?;Japanese Journal of Applied Physics;2018-05-25

4. Roughness generation during Si etching in Cl2 pulsed plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-07

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