Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices-Reference-Cited by-同舟云学术

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Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

Published:2013-11 Issue:6 Volume:31 Page:061310
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kim Jong Kyu,Cho Sung Il,Lee Sung Ho,Kim Chan Kyu,Min Kyung Suk,Kang Seung Hyun,Yeom Geun Young

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4823335

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quasi‐atomic layer etching of silicon with surface chlorination and removal using Ar or He plasmas;Plasma Processes and Polymers;2024-03-22

2. Rate optimization of atomic layer etching process of silicon;Acta Physica Sinica;2023

3. Insights into different etching properties of continuous wave and atomic layer etching processes for SiO2 and Si3N4 films using voxel-slab model;Journal of Vacuum Science & Technology A;2019-09

4. Anisotropic atomic layer etching of W using fluorine radicals/oxygen ion beam;Plasma Processes and Polymers;2019-07-04

5. A method for high selective etch of Si3N4 and SiC with ion modification and chemical removal;Japanese Journal of Applied Physics;2019-05-17

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