Anisotropic atomic layer etching of W using fluorine radicals/oxygen ion beam-Reference-Cited by-同舟云学术

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Anisotropic atomic layer etching of W using fluorine radicals/oxygen ion beam

Published:2019-07-04 Issue:9 Volume:16 Page:1900081
ISSN:1612-8850
Container-title:Plasma Processes and Polymers
language:en
Short-container-title:Plasma Process Polym

Author:

Kim Doo San¹,Kim Ju Eun¹,Lee Won Oh¹,Park Jin Woo¹,Gill You Jung¹,Jeong Byeong Hwa¹²,Yeom Geun Young¹³^ORCID

Affiliation:

1. School of Advanced Materials Science and EngineeringSungkyunkwan University Suwon Republic of Korea

2. Korea Institute for Super MaterialsULVAC KOREA Pyeongtaek Republic of Korea

3. SKKU Advanced Institute of Nano Technology (SAINT)Sungkyunkwan University Suwon Republic of Korea

Publisher

Wiley

Subject

Polymers and Plastics,Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ppap.201900081

Reference34 articles.

1. Atomic Layer Etching: An Industry Perspective

2. Atomic Layer Etching at the Tipping Point: An Overview

3. Atomic Layer Etching: Rethinking the Art of Etch

4. Overview of atomic layer etching in the semiconductor industry

5. Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma atomic layer etching of ruthenium by oxygen adsorption-removal cyclic process;Applied Surface Science;2024-10

2. Surface plasma modification of cellulose acetate fiber filter for the adsorption of typical components in smoke components;RSC Advances;2024

3. Topographically-selective atomic layer etching of SiO₂ using radical fluorination of the surface followed by Ar ion bombardment;Japanese Journal of Applied Physics;2023-12-01

4. Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment;Plasma Processes and Polymers;2023-11-16

5. Plasma application in atomic layer etching;Physics of Plasmas;2023-08-01

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