Study of damage generation induced by focused helium ion beam in silicon-Reference-Cited by-同舟云学术

Study of damage generation induced by focused helium ion beam in silicon

Published:2019-05 Issue:3 Volume:37 Page:031804
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Li Rongrong¹,Zhu Rui²^ORCID,Chen Shulin²,He Chao²,Li Mingqiang²,Zhang Jingmin²,Gao Peng²³⁴,Liao Zhimin¹,Xu Jun²

Affiliation:

1. State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

2. Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China

3. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

4. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China

Funder

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5096908

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