Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma-Reference-Cited by-同舟云学术

Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

Published:2016-01 Issue:1 Volume:34 Page:01B101
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Metzler Dominik¹,Li Chen²,Engelmann Sebastian³,Bruce Robert L.³,Joseph Eric A.³,Oehrlein Gottlieb S.¹

Affiliation:

1. Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20740

2. Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20740

3. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598

Funder

US Department of Energy

National Science Foundation (NSF)

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4935462

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