Effect of the amido Ti precursors on the atomic layer deposition of TiN with NH3
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.4764898
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of NH3 flow rate to titanium nitride as etch hard mask in thermal atomic layer deposition;Journal of Vacuum Science & Technology A;2024-09-13
2. Amidoxime-Containing Ti Precursors for Atomic Layer Deposition of TiN Thin Films with Suppressed Columnar Microstructure;Inorganic Chemistry;2023-03-09
3. Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions;Journal of Vacuum Science & Technology A;2021-01
4. Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition;Applied Physics Letters;2020-07-27
5. Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition;Journal of Vacuum Science & Technology A;2020-05
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