Investigation of generation processes at the SiO2/HgCdTe interface by gate controlled diodes-Reference-Cited by-同舟云学术

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Investigation of generation processes at the SiO2/HgCdTe interface by gate controlled diodes

Published:1985-01 Issue:1 Volume:3 Page:280-284
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Rosbeck J. P.,Blazejewski E. R.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.573240

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of dark current in Ge-on-Si photodiodes;Journal of Applied Physics;2012-09

2. Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide;Applied Physics Letters;2011-07-18

3. Structure and Electrical Characteristics of Metal/MCT Interfaces;Mercury Cadmium Telluride;2010-09-04

4. Investigation into MIS structures based on gradedband-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods;Russian Physics Journal;2009-10

5. Dark current modelling of midwave infrared HgCdTe gated photodiodes;2006 Conference on Optoelectronic and Microelectronic Materials and Devices;2006-12

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