Investigation into MIS structures based on gradedband-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods-Reference-Cited by-同舟云学术

Investigation into MIS structures based on gradedband-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods

Published:2009-10 Issue:10 Volume:52 Page:1003-1020
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Voitsekhovkii A. V.,Nesmelov S. N.,Dzyadukh S. M.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11182-010-9332-2.pdf

Reference28 articles.

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3. A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh et al., Fiz. Tekh. Poluprovodn., No. 11, 1327 (2008).

4. M. A. Kinch, Semicond. Semimet., 18, 313 (1981).

5. A. Rogalski, Infrared Detectors [Russian translation], Nauka, Novosibirsk, 2003.

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