High quality GaAs grown on Si-on-insulator compliant substrates-Reference-Cited by-同舟云学术

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High quality GaAs grown on Si-on-insulator compliant substrates

Published:2002 Issue:3 Volume:20 Page:1196
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Pei C. W.,Héroux J. B.,Sweet J.,Wang W. I.,Chen J.,Chang M. F.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs-on-insulator based vertical heterojunction tunnel FET: proposal and analysis for VLSI circuit applications;Physica Scripta;2024-07-24

2. Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration;Scientific Reports;2017-11-07

3. Remarkable Strength Characteristics of Defect-Free SiGe/Si Heterostructures Obtained by Ge Condensation;The Journal of Physical Chemistry C;2016-09-02

4. Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures;Applied Physics Letters;2015-06-08

5. Multijunction Solar Cell Designs Using Silicon Bottom Subcell and Porous Silicon Compliant Membrane;IEEE Journal of Photovoltaics;2013-07

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