Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor-Reference-Cited by-同舟云学术

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

Published:2016-01 Issue:1 Volume:34 Page:01A136
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Suh Sungin¹,Ryu Seung Wook²,Cho Seongjae³,Kim Jun-Rae¹,Kim Seongkyung¹,Hwang Cheol Seong¹,Kim Hyeong Joon¹

Affiliation:

1. Department of Materials Science and Engineering with Inter-University Semiconductor Research Center (ISRC), Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea

2. Department of Electrical Engineering, Stanford University, Stanford, California 94305-2311

3. Department of Electronic Engineering and New Technology Component & Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 13120, Republic of Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4937734

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