Reliability of nitrided Si–SiO2 interfaces formed by a new, low-temperature, remote-plasma process-Reference-Cited by-同舟云学术

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Reliability of nitrided Si–SiO2 interfaces formed by a new, low-temperature, remote-plasma process

Published:1995-07 Issue:4 Volume:13 Page:1788
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lee David R.

Publisher

American Vacuum Society

Subject

General Engineering

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