Role of C2F4, CF2, and ions in C4F8∕Ar plasma discharges under active oxide etch conditions in an inductively coupled GEC cell reactor
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.1874173
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