SiO2 etching in inductively coupled plasmas using heptafluoroisopropyl methyl ether and 1,1,2,2-tetrafluoroethyl 2,2,2-trifluoroethyl ether-Reference-Cited by-同舟云学术

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SiO2 etching in inductively coupled plasmas using heptafluoroisopropyl methyl ether and 1,1,2,2-tetrafluoroethyl 2,2,2-trifluoroethyl ether

Published:2020-04 Issue: Volume:508 Page:144787
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kim Jun-Hyun,Park Jin-Su,Kim Chang-Koo^ORCID

Funder

Korea Institute of Energy Technology Evaluation and Planning

Korea Government Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Korea government

GRRC program of Gyeonggi province

Photonics-Medical Convergence Technology Research Center

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor;Rueger;J. Vac. Sci. Technol. A,1997

2. Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates;Schaepkens;J. Vac. Sci. Technol. A,1998

3. Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor;Rueger;J. Vac. Sci. Technol. A,1999

4. Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide;Standaert;J. Vac. Sci. Technol. A,2004

5. Effect of Sidewall Properties on the Bottom Microtrench during SiO2 Etching in a CF4 Plasma;Min;J. Vac. Sci. Technol. B,2005

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5. Controlling Bowing and Narrowing in SiO2 Contact-Hole Etch Profiles Using Heptafluoropropyl Methyl Ether as an Etchant with Low Global Warming Potential;Coatings;2023-08-17

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