Optimization of secondary ion mass spectrometry detection limit for N in SiC-Reference-Cited by-同舟云学术

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Optimization of secondary ion mass spectrometry detection limit for N in SiC

Published:2003-09 Issue:5 Volume:21 Page:1649-1654
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Pivovarov A. L.,Stevie F. A.,Griffis D. P.,Guryanov G. M.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1595108

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusivity, solubility, and trapping of hydrogen in various metallic materials;Hydrogen Gas Embrittlement;2024

2. Characterizations on the doping of single-crystal silicon carbide;Materials Today Physics;2022-12

3. Nitrogen Investigation by SIMS in Two Wide Band-Gap Semiconductors: Diamond and Silicon Carbide;Materials Science Forum;2022-05-31

4. Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals;Applied Physics Express;2019-12-04

5. Raman Characterization of Carrier Concentrations of Al-implanted 4H-SiC with Low Carrier Concentration by Photo-Generated Carrier Effect;Crystals;2019-08-17

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