Recent advances in secondary ion mass spectrometry to characterize ultralow energy ion implants-Reference-Cited by-同舟云学术

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Recent advances in secondary ion mass spectrometry to characterize ultralow energy ion implants

Published:1999 Issue:5 Volume:17 Page:2345
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Chia Victor K. F.,Mount Gary R.,Edgell Michael J.,Magee Charles W.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Mass Spectrometry in Semiconductor Research;Mass Spectrometry Handbook;2012-05-21

4. Secondary cluster ions Ge 2 − and Ge 3 − for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures;Semiconductors;2010-03

5. Analysis of C60+ and Cs+ sputtering ions for depth profiling gold/silicon and GaAs multilayer samples by time of flight secondary ion mass spectrometry;Applied Surface Science;2010-01

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