Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry-Reference-Cited by-同舟云学术

Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry

Published:2013-12 Issue:12 Volume:47 Page:1556-1561
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Yunin P. A.,Drozdov Yu. N.,Drozdov M. N.,Korolev S. A.,Lobanov D. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782613120221.pdf

Reference14 articles.

1. S. Hofmann, Rep. Progr. Phys. 61, 827 (1998).

2. P. F. Fewster, X-Ray Scattering from Semiconductors (Imperial College Press, London, 2000).

3. D. Marseilhan, J. P. Barnes, F. Fillot, J. M. Hartmann, and P. Holliger, Appl. Surf. Sci. 255, 1412 (2008).

4. M. Gavelle, E. Scheid, F. Cristiano, C. Armand, J.-M. Hartmann, Y. Campidelli, A. Halimaoui, P.-F. Fazzini, and O. Marcelot, J. Appl. Phys. 102, 074904 (2007).

5. K. I. Schiffmann and M. Vergöhl, Surf. Interface Anal. 45, 490 (2013).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simple Non-Destructive Method of Ultrathin Film Material Properties and Generated Internal Stress Determination Using Microcantilevers Immersed in Air;Coatings;2019-08-01

2. Microstructure and Density of Mo Films in Multilayer Mo/Si Mirrors;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-01

3. Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry;Thin Solid Films;2016-05

4. Recovery of SIMS depth profiles with account for nonstationary effects;Applied Surface Science;2014-07