Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition

Published:2019-05 Issue:3 Volume:37 Page:031201
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Isobe Yasuhiro¹²,Sakai Takayuki¹²,Sugiyama Naoharu¹²,Mizushima Ichiro¹,Suguro Kyoichi¹,Miyashita Naoto¹,Lu Yi²,Wilson Amalraj Frank²,Kumar Dhasiyan Arun²,Ikarashi Nobuyuki²,Kondo Hiroki²,Ishikawa Kenji²,Shimizu Naohiro²,Oda Osamu²,Sekine Makoto²,Hori Masaru²

Affiliation:

1. Toshiba Electronic Devices and Storage Corporation, Nomi-shi, Ishikawa 923-1293, Japan

2. Graduate School of Engineering, Nagoya University, Nagoya, Aichi 464-8601, Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5083970

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1. Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition;Scientific Reports;2024-05-13

2. Perspectives on functional nitrogen science and plasma-based in situ functionalization;Japanese Journal of Applied Physics;2021-12-15

3. Novel Epitaxy for Nitride Semiconductors Using Plasma Technology;physica status solidi (a);2020-11-12

4. Simulation-aided design of very-high-frequency excited nitrogen plasma confinement using a shield plate;Journal of Vacuum Science & Technology B;2019-11

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