Differences between Li, Na, and K migration in thin SiO2 films during ToF-SIMS O2+ depth profiling-Reference-Cited by-同舟云学术

Differences between Li, Na, and K migration in thin SiO2 films during ToF-SIMS O2+ depth profiling

Published:2018-05 Issue:3 Volume:36 Page:03F129
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Krivec Stefan¹,Amsüss Andreas²,Schwab Stefan³,Hutter Herbert²

Affiliation:

1. Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, Austria

2. TU Wien (Vienna), Institute of Chemical Technologies and Analytics, Getreidemarkt 9, 1060 Wien, Austria

3. KAI-Kompetenzzentrum für Automobil–u. Industrieelektronik GmbH, Europastraße 8, 9524 Villach, Austria and TU Wien (Vienna), Institute of Chemical Technologies and Analytics, Getreidemarkt 9, 1060 Wien, Austria

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5019659

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