Investigation of plasma etch induced damage in compound semiconductor devices-Reference-Cited by-同舟云学术

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Investigation of plasma etch induced damage in compound semiconductor devices

Published:1994-07 Issue:4 Volume:12 Page:1351-1355
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Shul R. J.,Lovejoy M. L.,Hetherington D. L.,Rieger D. J.,Vawter G. A.,Klem J. F.,Melloch M. R.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579320

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Beam Etching of Compound Semiconductors;Handbook of Advanced Plasma Processing Techniques;2000

2. Optimization of blazed quantum-grid infrared photodetectors;Applied Physics Letters;1999-12-06

3. Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching;Applied Physics Letters;1999-11-08

4. Electrical Evaluation of Sidewall Damage Caused by CH4/H2Reactive Ion Etching;Japanese Journal of Applied Physics;1998-08-15

5. AlGaAs/GaAs high electron mobility transistor with a low-temperature grown GaAs ion damage blocking layer;Applied Physics Letters;1997-07-28

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