AlGaAs/GaAs high electron mobility transistor with a low-temperature grown GaAs ion damage blocking layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119608
Reference6 articles.
1. Dry etch processing of GaAs/AlGaAs high electron mobility transistor structures
2. Model for conductance in dry‐etch damagedn‐GaAs structures
3. Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2reactive ion etching
4. Investigation of plasma etch induced damage in compound semiconductor devices
5. Improvement in low energy ion‐induced damage with a low temperature GaAs capping layer
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