Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125224
Reference17 articles.
1. Molecular dynamics simulations of deep penetration by channeled ions during low-energy ion bombardment of III–V semiconductors
2. Evidence for heavy ion channeling in AlGaAs at low energies
3. Photoreflectance study on the behavior of plasma‐induced defects deactivating Si donors in GaAs
4. Diffusion and channeling of low-energy ions: The mechanism of ion damage
5. Model for conductance in dry‐etch damagedn‐GaAs structures
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1. Laser reflectometry in situ monitoring structural and growth effects on the electron cyclotron resonance etching of In[sub 0.49]Ga[sub 0.51]P layers in Al-free laser structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
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